Ion Track Technology


Reimar Spohr

PostHeaderIcon Abstract

Stopping power dependence of ion track etching in amorphous metallic Fe81B13.5Si3.5C2. C. Trautmann, R. Spohr, M. Toulemonde. Nuclear Inst. and Methods in Physics Research B 83(1993)513-517.

Latent tracks in amorphous metallic Fe81B13.5Si3.5C2 are selectively etched in FeCl3 resulting in etch pits with wide cone opening angles. The track etch threshold corresponds to an electronic stopping Se around 3.6 keV/A. For 3.4 < Se < 3.6 keV/A the etch pit formation is marginal. For S < 3.4 keV/A no etch pits were observed. This is above the threshold Se > 1.3 keV/A required for damage creation according to resistivity measurements.