Ion Track Technology


Reimar Spohr

PostHeaderIcon Abstract

Etching threshold for ion tracks in polyimide. Trautmann, C.; Bouffard, S.; Spohr, R. . Nuclear Inst. and Methods in Physics Research, B: Beam Interactions with Materials and Atoms v 116 n 1-4 Aug 1996.p 429-433.

Tracks of various heavy ions with energies up to 13 MeV/u were studied using the technique of selective chemical etching. It was found that for homogeneous track etching the energy loss of the ions has to surpass a threshold of about 450 eV/angstrom.In a transition regime between 180 and 450 eV/angstrom etching was possible but the mean diameter of the resulting pores showed a wider distribution than pores at higher energy losses. In order to describe this observation, the radial dose distribution was calculated using a Monte Carlo simulation code.Inhomogeneous etching is interpreted as due to the spatial fluctuations of the deposited energy along the ion path.(Author abstract) 14 Refs.