Ion Track Technology

PhysicsConsult

Reimar Spohr

PostHeaderIcon Abstract

Etch technique to generate profiled microstructures (in German). R. Spohr, B. Fischer, B. Genswürger, P. Hansen, J.­ P. Krumme. German Patent Registration 2717400, filed April 20, 1977, issued 26.10.1978;

A depth-dependent lithography is described, based on the defined penetration range of swift heavy ions. Two techniques are possible. (1) The ion range is modulated by a mask with controlled thickness. At the extreme, the ion beam is completely stopped by the mask. (2) The etch depth is modulated by depositing a mask on pre-irradiated material.